Energies, Vol. 19, Pages 1126: Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review

Energies, Vol. 19, Pages 1126: Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review

Energies doi: 10.3390/en19051126

Authors:
Daniel Burmester
Ramesh Rayudu
Alan Brent

The next evolution in power electronics is being driven by wide-bandgap materials—particularly silicon carbide and gallium nitride power semiconductor devices—which increase efficiency and power density, thus ensuring their integration into high-performance systems. One system poised to receive benefits from this progression is microgrids. This paper reviews common microgrid architectures, components, voltage and power levels, and power electronics to establish where wide-bandgap materials, specifically silicon carbide and gallium nitride, may benefit current and future microgrids.